ERIC Number: EJ979197
Record Type: Journal
Publication Date: 2013
Pages: 14
Abstractor: As Provided
ISBN: N/A
ISSN: ISSN-1521-0251
EISSN: N/A
How Well Does the SAT and GPA Predict the Retention of Science, Technology, Engineering, Mathematics, and Business Students
Rohr, Samuel L.
Journal of College Student Retention: Research, Theory & Practice, v14 n2 p195-208 2012-2013
This study examined the relationship between various admissions selection criteria utilized by a small, Liberal Arts College in Indiana. More specifically, the study examined if a higher college preparatory GPA and a higher aggregate score on the SAT helped predict the retention of science, technology, engineering, mathematics, and business students. Data was gathered using historical enrollment data of 803 students. A logistic regression analysis was utilized to examine the impact of the two variables on retention of science, technology, engineering, mathematics, and business students. College preparatory GPA and the aggregate SAT score were predictors of retention of science, technology, engineering, mathematics, and business students. For every point increase in GPA, the odds were more than twice as much that the student would be retained. For every point increase in SAT, there was 0.3% increase in retention. (Contains 6 tables.)
Descriptors: Liberal Arts, Grade Point Average, Enrollment, Predictor Variables, College Entrance Examinations, Undergraduate Students, Prediction, Academic Persistence, School Holding Power, College Preparation, School Size, Small Schools, Regression (Statistics), Engineering Education, Mathematics Education, STEM Education, Science Education, Technology Education, Business Administration Education, Correlation
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Publication Type: Journal Articles; Reports - Research
Education Level: Higher Education; Postsecondary Education
Audience: N/A
Language: English
Sponsor: N/A
Authoring Institution: N/A
Identifiers - Location: Indiana
Identifiers - Assessments and Surveys: SAT (College Admission Test)
Grant or Contract Numbers: N/A
IES Cited: ED565641