An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor. TiO[subscript 2] with a 400 nm thickness and a high dielectric constant ([epsilon][subscript r] [tilde] 100) was coated between the gold metal layers by using sol-gel and dip-coating techniques. A RC circuit was built to measure the capacitance of the nanocapacitors. Some fundamental thin-film characterization equipment such as a four-point probe, a step profiler and an atomic force microscope were used in this laboratory to characterize the devices' morphology and electrical properties. (Contains 8 figures.)